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Journal of the Korean Chemical Society (JKCS)

ISSN 1017-2548(Print)
ISSN 2234-8530(Online)
Volume 35, Number 5
JKCSEZ 35(5)
October 20, 1991 

Spectrophotometric Determination of Traces of Boron in Semiconductor-grade Trichlorosilane

반도체급 삼염화실란중의 극미량 붕소의 분광 광도법적 측정
Dong Kwon Kim, Hee Young Kim

김동권, 김희영
흡착 분리 방법을 이용하여 고순도 삼염화실란(TCS) 중의 미량 붕소 농도를 분광광도법적으로 측정하는 방법을 제안하였다. TCS중의 붕소 화합물과 복합체를 잘 형성하고 황산-quinalizarin계 발색 시약에 잘 녹으며 측정시 간섭 효과를 나타내지 않는 Lewis 염기성 물질로 NaCl이 선택되었다. 이러한 흡착 분리 방법을 통해 TCS분석 도중에 실리카겔 및 기포가 생성되는 문제를 방지할 수 있었는데, 반도체급 TCS중의 붕소 농도는 ±20%의 표준편차 범위내에서 6.1 μg/l로 측정되었다. 반면 NaCl로 붕소화합물을 제거시킨 정제된 TCS 중의 붕소 농도는 0.2 μg/l이어서 NaCl의 우수한 흡착 성능을 확인할 수 있었다. 또한 NaCl이 TCS 정제 중 붕소 제거에 효과적임을 다른 잘 알려진 흡착제들과 비교 분석하였다.

A procedure for spectrophotometric determination of traces of boron in high-purity trichlorosilane (TCS) is proposed utilizing an adsorptive separation. NaCl is chosen as an Lewis base adsorbent which forms a complex with boron compounds in TCS, and is well dissolved in sulfuric acid-quinalizarin color-forming agent without causing an interference in colorimetric measurements. The proposed adsorptive separation method is free from the formation of silica gel and gas bubbles during the analysis of TCS. The method reveals that the boron concentration in a semiconductor grade TCS is 6.1 μg/l within the standard deviation of ±20%. On the other hand, the boron concentration of the purified TCS which is separated from NaCl-boron compounds complex is reduced to 0.2 μg/l, showing the efficient applicability of NaCl to the adsorptive separation. The effectiveness of NaCl for the removal of boron in TCS purification is also described in comparison with other well-known adsorbents.

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