ISSN 1017-2548(Print)
ISSN 2234-8530(Online)
Volume 31, Number 4
JKCSEZ 31(4)
August 20, 1987 

The electrical conductivity of highly pure polycrystalline sample of La2O3 has been measured at temperatures from 600℃ to 1,050℃ and oxygen pressure range of 1 × 10-6 torr to 1 × 102 torr. The defect structure and semiconductor type are investigated by measuring the temperature and oxygen pressure dependences of electrical conductivity. Sintered La2O3 exhibits the electrical conductivities in the range of 1 × 10-9 to 1 × 10-3 ohm-l·cm-1 under the above oxygen pressures. The oxygen pressure dependences on electrical conductivity are characterized by 5.3 at 1,000℃ and 5.7 at 700℃ and more higher values of 9∼14 below 700℃. The increase in n value with decreasing temperature indicates that a simple conduction mechanism does not exist in this material. The conduction carriers are not metal vacancy but oxygen ion at lower pressures. The conduction data indicate a significant ionic conduction at lower temperatures and electronic conduction at higher temperatures.