ISSN 1017-2548(Print)
ISSN 2234-8530(Online)
Volume 44, Number 3
JKCSEZ 44(3)
June 20, 2000 

The metal impurities in specific regions at near surface of silicon wafer were determined by constant depth etching·lt is possible to etch uniformly over the entire wafer surface by 1㎛ depth with 5 mL of etching solution made up of HF and HNO3 mixed by l:3 volume ratio. The microwave oven was used to evaporate the solution after etching. After spiking, The recoveries of Cu, Ni, Zn, Cr, Mg and K were found to be 99∼105%ted in polysilicon region and could be quantified by 1㎛ depth