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Bulletin of the Korean Chemical Society (BKCS)

ISSN 0253-2964(Print)
ISSN 1229-5949(Online)
Volume 11, Number 1
BKCSDE 11(1)
January 20, 1990 

Etching of an Al Solid by SiCl4 Molecules at 600 eV
Seung Chul Park*, Chul Hee Cho, Chang Hwan Rhee
We present a theoretical investigation on the etching of an Al solid by SiCl4 molecules at a collision energy of 600 eV. The classical trajectory method is employed to calculate Al etching yields, degree of anisotropy, kinetic energy distribution and angular distribution. The calculated results are compared with the reaction of a Cu solid by SiCl4. The major products of the reaction are aluminum monomers and dimers together with considerable quantities of multimers. The Al solid shows better etching yield and better anisotropy than the Cu solid. This is consistent with the problem in the CMOS micro-fabrication of the CuAl and CuAlSi alloys. The relevance of these calculations for the dry etching of CuAl alloy is discussed.
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