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Bulletin of the Korean Chemical Society (BKCS)

ISSN 0253-2964(Print)
ISSN 1229-5949(Online)
Volume 35, Number 3
BKCSDE 35(3)
March 20, 2014 

Fabrication of Vertical Organic Junction Transistor by Direct Printing Method
Gunchul Shin, Gyu-Tae Kim*, Jeong Sook Ha*
Organic junction transistor, Poly(3-hexylthiophene), Micro-contact printing, Au-nanoparticle, Langmuir-Schaefer technique
An organic junction transistor with a vertical structure based on an active layer of poly(3-hexylthiophene) was fabricated by facile micro-contact printing combined with the Langmuir-Schaefer technique, without conventional e-beam or photo-lithography. Direct printing and subsequent annealing of Au-nanoparticles provided control over the thickness of the Au electrode and hence control of the electrical contact between the Au electrode and the active layer, ohmic or Schottky. The junction showed similar current-voltage characteristics to an NPN-type transistor. Current through the emitter was simply controllable by the base voltage and a high transconductance of ~0.2 mS was obtained. This novel fabrication method can be applied to amplifying or fast switching organic devices.
731 - 736
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