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Bulletin of the Korean Chemical Society (BKCS)

ISSN 0253-2964(Print)
ISSN 1229-5949(Online)
Volume 34, Number 6
BKCSDE 34(6)
June 20, 2013 

Optical Properties and Field Emission of ZnO Nanorods Grown on p-Type Porous Si
Taehee Park, Eunkyung Park, Juwon Ahn, Jungwoo Lee, Jongtaek Lee, Sang-hwa Lee, Jae-yong Kim, Whikun Yi*
n-Type ZnO nanorod, Porous silicon, Photoluminescence, Electroluminescence, Field emission
N-type ZnO nanorods were grown on p-type porous silicon using a chemical bath deposition (CBD) method (p-n diode). The structure and geometry of the device were examined by field-emission scanning electron microscopy (FE-SEM) and X-ray diffraction (XRD) while the optoelectronic properties were investigated by UV/Vis absorption spectrometry as well as photoluminescence and electroluminescence measurements. The field emission (FE) properties of the device were also measured and its turn-on field and current at 6 V/μm were determined. In principle, the growth of ZnO nanorods on porous siicon for optoelectronic applications is possible.
1779 - 1782
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