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Bulletin of the Korean Chemical Society (BKCS)

ISSN 0253-2964(Print)
ISSN 1229-5949(Online)
Volume 22, Number 9
BKCSDE 22(9)
September 20, 2001 

RF-Sputtered Vanadium Oxide Thin Films: Effect of Oxygen Partial Pressure on Structural and Electrochemical Properties
Yong Joon Park, Nam-Gyu Park, Kwang Sun Ryu, Soon Ho Chang, Sin-Chong Park, Seon-Mi Yoon, Dong-Kuk Kim
Layered double hydroxide (LDH), Zinc basic salt (ZBS), Functional molecules, Intercalation, Nanohybrid.
Vanadium oxide thin films with thickness of about 2000 Å have been prepared by radio frequency sputter deposition using a V2O5 target in a mixed argon and oxygen atmosphere with different Ar/O2 ratio ranging from 99/1 to 90/10. X-ray diffraction and X-ray absorption near edge structure spectroscopic studies show that the oxygen content higher than 5% crystallizes a stoichiometric V2O5 phase, while oxygen deficient phase is formed in the lower oxygen content. The oxygen content in the mixed Ar + O2 has a significant influence on electrochemical lithium insertion/deinsertion property. The discharge-charge capacity of vanadium oxide film increases with increasing the reactive oxygen content. The V2O5 film deposited at the Ar/O2 ratio of 90/10 exhibits high discharge capacity of 100 μAh/cm2 -μm along with good cycle performance.
1015 - 1018
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