ISSN 1017-2548(Print)
ISSN 2234-8530(Online)
Volume 38, Number 7
JKCSEZ 38(7)
February 20, 1994 

Tungsten thin film was deposited on p-(100) silicon substrate by using the LPCVD(low pressure chemical vapor deposition) technique. WF6 was used as a source gas for tungsten and SiH4 was used as a reducing gas for WF6. Tungsten thin film was deposited by either SiH4 or Si substrate reduction of WF6 under cold-wall condition and it was deposited by SiH4 reduction of WF6 under hot-wall condition. The crystal structure of deposited thin film under both conditions were identified to be bcc (body centered cubic). The physical and electrical properties of deposited thin films were investigated. The deposited film under hot-wall condition changed to WSi2 film by the annealing under 800℃. From the experimental results and theoretical considerations, the change of the crystal structure of the thin film by annealing was discussed. WSi2 thin film, which was known to have good compatibility with Si substrate, could be produced under hot-wall condition although the film properties were superior under cold-wall condition.