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Journal of the Korean Chemical Society (JKCS)

ISSN 1017-2548(Print)
ISSN 2234-8530(Online)
Volume 40, Number 3
JKCSEZ 40(3)
June 20, 1996 

 
Title
Preparation of Zn-Doped GaN Film by HVPE Method

HVPE법에 의한 Zn-Doped GaN 박막 제조
Author
Hyang Sook Kim, Jin Soo Hwang, Paul Joe Chong

김향숙,황진수,정필조
Keywords
Abstract
GaN 단결정 박막은 halide vapor phase epitaxy(HVPE) 방법을 사용하여 사파이어 기판위에 헤테로에피탁시하게 성장시켰다. 이렇게 제조된 박막은 n형 전도성을 갖는다. 아연(Zn)을 받개 불순물로 도핑시켜 절연형 GaN 박막을 만들었는데 2.64과 2.43 eV의 청색영역에서 발광 피크를 가졌다. 본 연구에 의해 GaN 박막은 MIS(metal-insulator-semiconductor) 접합 구조로 제작이 가능함을 시사하였고, 이종접합형 발광소자 개발에 기초자료가 될 것으로 전망된다.

For the preparation of single-crystalline GaN film, heteroepitaxial growth on a sapphire substrate was carried out by halide vapor phase epitaxy(HVPE) method. The resulting GaN films showed n-type conductivity. The insulator type GaN film was made by doping with Zn(acceptor dopant), which showed emission peaks around 2.64 and 2.43 eV. The result of this study indicates that GaN can be obtained in an epitaxial structure of MIS(metal-insulator-semiconductor) junction. The observed data are regarded as fundamental in developing GaN epitaxial films for light emitting devices of hetero-structure type.

Page
167 - 172
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