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Journal of the Korean Chemical Society (JKCS)

ISSN 1017-2548(Print)
ISSN 2234-8530(Online)
Volume 39, Number 1
JKCSEZ 39(1)
February 20, 1995 

Acid Etching of Sapphire Substrate for Hetero-Epitaxial Growth

Hetero-Epi 막 성장용 사파이어 기판의 산에칭
Hyang Sook Kim, Jin Soo Hwang, Paul Joe Chong*

김향숙, 황진수, 정필조*
단결정 적층막을 제조하기 위해 사용되는 사파이어 기판에 대하여 황산과 인산의 혼합용액에서 화학적 에칭을 조사하였다. 여러가지 배향면의 사파이어에 대한 에칭정도는 황산과 인산의 3:1 조성과 315±2℃에서 에칭시간에 의존하였다. 280~320℃ 번위에서 30분간씩 산에칭시킨 후에 에칭속도(R)를 구하였고, logR에 대한 1/T의 semilog plot로부터 활성화에너지(Ea)를 구하였으며, 그것은 ((1012) > (1010) > (1120) > (0001)면 순서로 감소하였다. 한편 (0001), (1012), (1010)과 (1120)면의 표층 두께를 각각 64.6, 46.5, 16.2와 5.1μm 에칭시킨 후의 기판 표면을 SEM으로 관찰하였다.

The surface of a sapphire substrate used for hetero-epitaxy was chemically polished in a mixture of H3PO4 and H2SO4 solution. The extent of etching for various crystal orientations was found to be dependent on the etching time at 315±2℃ and at the composition of H2SO4 : H3PO4=3 : 1. In addition, the etching rates of the substrates were investigated in the mixture of H2SO4 : H3PO4=3 :1 by volume and in the temperature range of 280~320℃. From the plot of log R against 1/T, the activation penergy (Ea) was found to be in the order of (1012) > (1010) > (1120) > (0001) plane. After removing the surface layers of the sapphire with (0001), (1012), (1010) and (1120) plane by a thickness of 64.6, 46.5, 16.2 and 5.1 μm, respectively, the morphology of the resultingsurface was observed by SEM.

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