ISSN 1017-2548(Print)
ISSN 2234-8530(Online)
Volume 36, Number 4
JKCSEZ 36(4)
August 20, 1992 

The x-values of the nonstoichiometric compound YbOx have been measured in a temperature range of 600 to 1150℃ under oxygen partial pressure of 1.00 × 10^-2 atm∼atmospheric air pressure. The values are varied between 1.55453 and 1.60794 in the conditions. The enthalpy of the formation for x' in YbO_1.5＋x'(△Hf) was 1.55, 1.18, and 1.05 kJ/mol under the above conditions, respectively. The electrical conductivities of the oxides or σ have been measured in the temperature range from 600 to 1100℃ under oxygen partial pressure of 1.00 × 10^-5 ∼ 2.00 × 10^-1 atm. They varied from 10^-9 to 10^-5 ohm^-1 cm^-1 within the semiconductor range. The Arrhenius plots of the electrical conductivities show a linearity and the activation energy for the conduction was about 1.7eV. The oxygen partial pressure dependence of the conductivity or 1/n value increases with the pressure. The nonstoichiometric conduction mechanism of the oxide was discussed in terms of the x values, σ values, and the thermodynamic data.