ISSN 1017-2548(Print)
ISSN 2234-8530(Online)
Volume 28, Number 3
JKCSEZ 28(3)
June 20, 1984 

The electrical conductivity of p-type yttrium sesquioxide has been measured as a function of temperature and of oxygen partial pressure at temperatures from 650 to 1050℃ and oxygen partial pressures from 1 × 10-5 to 2 × 10-1atm. Plots of log conductivity vs. 1/T at constant oxygen partial pressures are found to be linear with low-and high-temperature dependences of conductivity. The high-temperature dependence of conductivity shows two different defect structures. The plots of log conductivity vs. log PO2 are found to be linear at PO2's of 10-5 to 10-1 atm. The electrical conductivity dependences on PO2 are found to be σ∝PO21/6 at 850~950℃, σ∝PO23/16 at 950~1050℃ and σ∝PO21/7.5 ~ σ∝PO21/8.3 at 650~800℃, respectively. The defect structures are Oi" at 850~950℃ and VM''' at 950~1050℃. The electron hole is main carrier type, however, ionic contribution is found at lower temperature portion.