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Journal of the Korean Chemical Society (JKCS)

ISSN 1017-2548(Print)
ISSN 2234-8530(Online)
Volume 58, Number 1
JKCSEZ 58(1)
February 20, 2014

Title	Growth Kinetics and Electronic Properties of Passive Film of Nickel in Borate Buffer Solution Borate 완충용액에서 니켈 산화피막의 생성 과정과 전기적 성질
Author	Younkyoo Kim* 김연규*
Keywords	니켈, 부식, 부동화, p-형 반도체, Mott-Schottky , Nickel, Corrosion, Passivation, p-Type semiconductor, Mott-Schottky
Abstract	Borate 완충용액에서 Ni의 부동화 피막의 생성과정(growth kinetics)과 부동화 피막의 전기적 성질을 변전위법, 대 시 간 전류법 그리고 단일 주파수 또는 다중 주파수 전기화학적 임피던스 측정법으로 조사하였다. 이때 생성되는 산화피막은 Mott-Schottky 식이 적용되는 p-형 반도체 성질을 보였으며, 낮은 전극전위에서 생성되는 Ni의 부동화 피막 Ni(OH)2는 전극 전위가 증가하면서 NiO, NiO(OH)로 변화되는 것을 알 수 있었다. In a borate buffer solution, the growth kinetics and the electronic properties of passive film on nickel were investigated, using the potentiodynamic method, chronoamperometry, and single- or multi-frequency electrochemical impedance spectroscopy. The oxide film formed during the passivation process of nickel has showed the electronic properties of p-type semiconductor, which follow from the Mott-Schottky equation. It was found out that the passive film (Ni(OH)2) of Ni formed in the low electrode potential changes to NiO and NiO(OH) while the electrode potential increases.
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