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Journal of the Korean Chemical Society (JKCS)

ISSN 1017-2548(Print)
ISSN 2234-8530(Online)
Volume 54, Number 4
JKCSEZ 54(4)
August 20, 2010 
 
Title
 Investigation of the Growth Kinetics of Al Oxide Film in Sulfuric Acid Solution

황산 용액에서 Al 산화피막의 생성과정 연구
Author
 Jung Kyoon Chon, Younkyoo Kim*

천정균, 김연규*
Keywords
 Al2O3, Al(OH)3, 부동화 막, 산화 막, n-형 반도체, Mott-Schottky , Aluminum oxide, Passive film, Oxide film, n-Type semiconductor, Mott-Schottky
Abstract

We have investigated the growth kinetics of Al oxide film by anodization in sulfuric acid solution and the electronic properties of this film using electrochemical impedance spectroscopy. Al oxide film consisted Al2O3 was grown based on the point defect model and shown the eclctronic properties of n-type semiconductor.

Page
 380 - 386
Full Text
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