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Journal of the Korean Chemical Society (JKCS)

ISSN 1017-2548(Print)
ISSN 2234-8530(Online)
Volume 45, Number 2
JKCSEZ 45(2)
April 20, 2001 

Light Emitting Diodes Based on Polyaniline

폴리아닐린을 이용한 발광소자 연구
Eun Ok Kim, Soo Beom Park, Seok Heo, Sung Joo Lee

김은옥, 박수범, 허황, 이성주
여러가지 산화상태의 폴리아닐린을 화학적으로 합성하여 FT-IR, UV-Vis, GPC, TG-DTA로 특성분석하였다. ITO기판위에 다양한 산화상태의 LEB-PANI/NMR 용액으로 스핀코팅하고, Al 전극을 진공중착하여 단일층 발광다이오드를 제작하고 I-V 특성과 EL스펙트럼을 확인하였다. UV-Vis 스펙트럼에서 완전환원형인 LEB 함량이 증가할 수록 π→π* 전이의 장파장이동과 분자 엑시톤 전이 세기가 감소하고 PL 과 EL세기가 증가하는 것을 확인하였다. ITO/LEB/AL 구조의 LEB 에서 작동전압은 5V 이었다. 백색광은 단지 폴리아닐린의 환원형 구조에서만 발광하는 것을 확인하였다.

Various oxidation states of Polyaniline(PANI) were chemically synthesized, and characterized by FT-IR, UV-Vis, GPC, TG-DTA. Single layer light emitting diodes(LED) were prepared by spin coating of LEB-PANI solutions which have various oxidation states onto an ITO substrate and subsequent vacuum deposition of aluminum top electrode and then current-voltage characteristics, EL spectrum was investigated. It was found that π→π* transition were shifted to longer wavelength and molecular exciton transition were decreased in the UV-Vis spectra and the intensity of EL and PL were increased as the contents of fully reduced form LEB increased. The turn-on voltage of ITO/LEB/Al structured LED was 5 V. It was found that the white light was emitted only from the phase with reduced repeat unit.

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