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Bulletin of the Korean Chemical Society (BKCS)

ISSN 0253-2964(Print)
ISSN 1229-5949(Online)
Volume 18, Number 2
BKCSDE 18(2)
February 20, 1997

Title	Barrier Height from V-I Characteristics of Semiconductor Contact: Reaction of Adsorbed Oxygen with Carbon Monoxide on ZnO (1010)
Author	Hye Jung Kim, Chong Soo Han
Keywords
Abstract	Barrier height on the surface was monitored at 77 K by observing the inflection of V-I characteristics of ZnO(1010)-ZnO(1010) contact in the surface reaction of oxygen species with carbon monoxide. The contact showed inflections at 10-20 mV and 10-50 mV for the sample adsorbed oxygen at 298 K and 573 K, respectively. When the sample adsorbed oxygen at 573 K was exposed to carbon monoxide at 298 K and 573 K, inflections were observed at 10-40 mV and 10-30 mV, respectively. The results indicated that the adsorption of oxygen on ZnO increased the surface barrier height, and the reaction of carbon monoxide with the oxygen-preadsorbed (at 573 K) ZnO decreased the surface barrier height.
Page	149 - 151
Full Text	PDF

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