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Bulletin of the Korean Chemical Society (BKCS)

ISSN 0253-2964(Print)
ISSN 1229-5949(Online)
Volume 15, Number 1
BKCSDE 15(1)
January 20, 1994

Title	Investigation of Initial Formation of Aluminum Nitride Films by Single Precursor Organometallic Chemical Vapor Deposition of [Me2Al(μ-NHR)]2 (R=iPr, tBu)
Author	Myung Mo Sung, Hyun Dam Jung, June-Key Lee, Sehun Kim, Joon T. Park, Yunsoo Kim
Keywords
Abstract	The organometallic chemical vapor deposition of single precursors, [Me2Al(μ-NHR)]2 (R=iPr, tBu), for alumininum nitride thin films has been investigated to evaluate their poroperties as potential precursors. In chemical vapor deposition processes the gas phase products scattered from a Ni(100) substrate were analyzed by mass spectrometry and the deposited films were characterized by X-ray photoelectron spectroscopy (XPS). The optimum temperatures for the formation of AlN films have been found to be between 700 K and 800 K. Carbon contamination of the films seems to be attributed mainly to the methyl groups bonded to the aluminum atoms. It is apparent that tBu group is better than iPr group as a substituent on the nitrogen atom of the single precursors for the AlN thin film formation.
Page	79 - 83
Full Text	PDF

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