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Bulletin of the Korean Chemical Society (BKCS)

ISSN 0253-2964(Print)
ISSN 1229-5949(Online)
Volume 13, Number 2
BKCSDE 13(2)
February 20, 1992 

Etching of Al and Cu Solids by SiCl4 Molecules
Chul Hee Cho, Woan Lee, Chang Hwan Rhee, Seung Chul Park*
The classical trajectory method, previously applied to the reactions of polyatomic molecules with fcc structured metal solids[S. C. Park, C. H. Cho, and C. H. Rhee, Bull. Kor. Chem. Soc., 11, 1(1990)]1 is extended to the collision energy dependence of the reaction of the Al solid by SiCl4 molecules. We have calculated etching yields, degrees of anisotropy, kinetic energy distributions, and angular distributions for the reactions of the Al solid and compared with those for the reactions of the Cu solid. Over the range of collision energies we considered, the reactions of the Al soIid show higher etching yield and better anisotropy than the reactions of the Cu solid. Details of reaction mechanisms and the relevance of these calculations for the dry etching of CuAl alloy are discussed.
187 - 192
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