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Bulletin of the Korean Chemical Society (BKCS)

ISSN 0253-2964(Print)
ISSN 1229-5949(Online)
Volume 11, Number 4
BKCSDE 11(4)
April 20, 1990 

Oxygen Interstitial Defects and Ion Hopping Conduction of X ThO2 + (1-X) Gd2O3 Solid Solutions: O.O8≤X≤0.12
Sung Ho Park, Yoo Young Kim, Keu Hong Kim*
Gd2O3-ThO2 solid solutions containing 8,10 and 12 mol % ThO2 were synthesized with spectroscopically pure Gd2O3, and ThO2 polycrystalline powders. X-ray diffraction revealed that all synthesized specimens have the modified fluorite structure, and the lattice parameter of Gd2O3 is nearly unchanged with increasing ThO2 mol %. Both ac and dc conductivities were measured in the temperature range 500-1100 ℃ under Po2's from 10-6 to 10-1 atm. The dc conductivities are nearly independent of Po2, and agree with the ac values. This implies that the solid solutions are ionic conductors. The conductivity increases with increasing ThO2 mol % with an average activation energy of 1.23 eV. An oxygen interstitial defect and ionic hopping conduction are suggested.
339 - 342
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