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Bulletin of the Korean Chemical Society (BKCS)

ISSN 0253-2964(Print)
ISSN 1229-5949(Online)
Volume 10, Number 5
BKCSDE 10(5)
May 20, 1989

Title	Electrical Properties of Pure and Cadmium-Doped Indium Sesquioxide
Author	Sung Han Lee, Jong Hwan Lee, Keu Hong Kim*, Jong Ho Jun
Keywords
Abstract	Cadmium-doped indium sesquioxide systems with a variety of CdO mol % were prepared to investigate the effect of doping on the electrical properties of indium sesquioxide. The electrical conductivities of pure In2O3 and Cd-doped In2O3 systems were measured in the temperature range from 25 to 1200℃ and Po2 range from 10-7 to 10-1 atm, and the thermoelectric power was measured in the same temperature range. The electrical conductivity and thermopower decreased with increasing CdO mol % indicating that all the samples are n-type semiconductors. The electrical conductivities of pure In2O3 and lightly doped In2O3 were considerably affected by the chemisorption O2 at temperatures of 400 to 560℃ and then gaseous oxygen was reversibly chemisorbed at the temperature. The predominant defects in In2O3 are believed to be triply-charged interstitial indiums at temperatures above 560℃ and oxygen vacancies below 560℃. In Cd-doped In2O3 systems, cadmium acts as an electron acceptor and inhibits the transfer of lattice indium to interstitial sites, which give rise to the decrease of the electrical conductivity.
Page	418 - 422
Full Text	PDF

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