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Bulletin of the Korean Chemical Society (BKCS)

ISSN 0253-2964(Print)
ISSN 1229-5949(Online)
Volume 35, Number 11
BKCSDE 35(11)
November 20, 2014 

Indium Sulfide and Indium Oxide Thin Films Spin-Coated from Triethylammonium Indium Thioacetate Precursor for n-Channel Thin Film Transistor
Tung Duy Dao, Hyun-Dam Jeong*
Indium sulfide, Indium oxide, Thioacetate, Spin coating, Thin film transistor
The In2S3 thin films of tetragonal structure and In2O3 films of cubic structure were synthesized by a spin coating method from the organometallic compound precursor triethylammonium indium thioacetate ([(Et)3NH]+[In(SCOCH3)4]−; TEA-InTAA). In order to determine the electron mobility of the spin-coated TEA-InTAA films, thin film transistors (TFTs) with an inverted structure using a gate dielectric of thermal oxide (SiO2) was fabricated. These devices exhibited n-channel TFT characteristics with a field-effect electron mobility of 10.1 cm2V−1s−1 at a curing temperature of 500 oC, indicating that the semiconducting thin film material is applicable for use in low-cost, solution-processed printable electronics.
3299 - 3302
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