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Bulletin of the Korean Chemical Society (BKCS)

ISSN 0253-2964(Print)
ISSN 1229-5949(Online)
Volume 35, Number 11
BKCSDE 35(11)
November 20, 2014 

Photoelectrochemical Water Splitting on a Delafossite CuGaO2 Semiconductor Electrode
Myeongsoon Lee, Don Kim, Yong Tae Yoon, Yeong Il Kim*
CuGaO2, Delafossite, Photocathode, p-Type semiconductor, Water splitting
A pellet of polycrystalline CuGaO2 with a delafossite structure was prepared from Ga2O3 and CuO by hightemperature solid-state synthesis. The CuGaO2 pellet was a p-type semiconductor for which the electrical conductivity, carrier density, carrier mobility and Seebeck coefficient were 5.34 × 10−2 Ω−1cm−1, 3.5 × 1020 cm−3, 9.5 × 10−4 cm2V−1s−1 at room temperature, and +360 μV/K, respectively. It also exhibited two optical transitions at about 2.7 and 3.6 eV. The photoelectrochemical properties of the CuGaO2 pellet electrode were investigated in aqueous electrolyte solutions. The flat-band potential of this electrode, determined using a Mott- Schottky plot, was +0.18 V vs SCE at pH 4.8 and followed the Nernst equation with respect to pH. Under UV light illumination, a cathodic photocurrent developed, and molecular hydrogen simultaneously evolved on the surface of the electrode due to the direct reduction of water without deposition of any metal catalyst.
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