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Bulletin of the Korean Chemical Society (BKCS)

ISSN 0253-2964(Print)
ISSN 1229-5949(Online)
Volume 35, Number 10
BKCSDE 35(10)
October 20, 2014 

Characteristics of Plasma Polymerized Low-dielectric Constant SiCOH Films Deposited with Tetrakis(trimethylsilyloxy)silane and Cyclohexane Precursors
Hoonbae Kim, Hyojin Oh, Chaemin Lee, Donggeun Jung*, Jin-Hyo Boo*
Low dielectric constant, Plasma enhanced chemical vapor deposition, Fourier transform infrared spectroscopy, Hardness, Elastic modulus
The electrical and mechanical properties of the plasma polymerized low dielectric constant SiCOH films were investigated. The SiCOH films were produced with tetrakis(trimethylsilyloxy)silane and cyclohexane as precursors by using a plasma enhanced chemical vapor deposition. When the deposition plasma powers were changed from 10 to 50 W, the relative dielectric constant of the SiCOH film increased from 2.09 to 2.76 and their hardness and elastic modulus were changed from 1.6 to 5.6 GPa and from 16 to 44 GPa, respectively. After thermal annealing at 500 oC, the annealed SiCOH films showed relative dielectric constants of 1.80-2.97, a hardness of 0.45-0.6 GPa and an elastic modulus of 6-7 GPa. And then, the chemical structures of asdeposited and annealed SiCOH films were analyzed by using Fourier transform infrared spectroscopy.
2941 - 2944
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