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Bulletin of the Korean Chemical Society (BKCS)

ISSN 0253-2964(Print)
ISSN 1229-5949(Online)
Volume 33, Number 8
BKCSDE 33(8)
August 20, 2012 


Formation of Niobium Oxide Film with Duplex Layers by Galvanostatic Anodization

Hyun-Kee Kim, Jeong Eun Yoo, Jiyoung Park, Eul Won Seo*, Jinsub Choi*
Niobium, Porous layer, Barrier layer, Duplex oxide
Studies on niobium anodization in the mixture of 1 M H3PO4 and 1 wt % HF at galvanostatic anodization are described here in detail. Interestingly, duplex niobium oxide consisting of thick barrier oxide and correspondingly thick porous oxide was prepared at a constant current density of higher than 0.3 mAcm−2, whereas simple porous type oxide was formed at a current density of lower than 0.3 mAcm−2. In addition, simple barrier or porous type oxide was obtained by galvanostatic anodization at a single electrolyte of either 1 M H3PO4 or 1 wt % HF, respectively. The formation mechanism of duplex type structures was ascribed to different forming voltages required for moving anions.
2675 - 2678
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