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Bulletin of the Korean Chemical Society (BKCS)

ISSN 0253-2964(Print)
ISSN 1229-5949(Online)
Volume 26, Number 1
BKCSDE 26(1)
January 20, 2005 

Synthesis and Characterization of Gallium Nitride Powders and Nanowires Using Ga(S2CNR2)3 (R = CH3, C2H5) Complexes as New Precursors
Woo-Sik Jung*, Choon Sup Ra, Bong-Ki Min
Gallium nitride, Powder, Nanowire, 71Ga MAS NMR, Ga(III) complex
Gallium nitride (GaN) powders and nanowires were prepared by using tris(N,N-dimethyldithiocarbamato)gallium(III) (Ga(DmDTC)3) and tris(N,N-diethyldithiocarbamato)gallium(III) (Ga(DeDTC)3) as new precursors. The GaN powders were obtained by reaction of the complexes with ammonia in the temperature ranging from 500 to 1100 oC. The process of conversion of the complexes to GaN was monitored by their weight loss, XRD, and 71Ga magic-angle spinning (MAS) NMR spectroscopy. Most likely the complexes decompose to γ-Ga2S3 and then turn into GaN via amorphous gallium thionitrides (GaSxNy). The reactivity of Ga(DmDTC)3 with ammonia was a little higher than that of Ga(DeDTC)3. Room-temperature photoluminescence spectra of asprepared GaN powders exhibited the band-edge emission of GaN at 363 nm. GaN nanowires were obtained by nitridation of as-ground γ-Ga2S3 powders to GaN powders, followed by sublimation without using templates or catalysts.
131 - 135
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