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Bulletin of the Korean Chemical Society (BKCS)

ISSN 0253-2964(Print)
ISSN 1229-5949(Online)
Volume 25, Number 4
BKCSDE 25(4)
April 20, 2004 

Encapsulated Silicon Nanocrystals Formed in Silica by Ion Beam Synthesis
Han-Woo Choi*, Hyung-Joo Woo, Joon-Kon Kim, Gi-Dong Kim, Wan Hong, Young-Yong Ji
Silicon, Nanocrystal, Photoluminescence, Passivation
The photoluminescence (PL) emission of Si nanocrystals synthesized by 400 keV Si ion implanted in SiO2 is studied as a function of ion dose and annealing time. The formation of nanocrystals at around 600 nm from the surface was confirmed by RBS and HRTEM, and the Si nanocrystals showed a wide and very intense PL emission at 700-900 nm. The intensity of this emission showed a typical behaviour with a fast transitory increase to reach a saturation with the annealing time, however, the red shift increased continuously because of the Ostwald ripening. The oversaturation of dose derived a decrease of PL intensity because of the diminishment of quantum confinement. A strong enhancement of PL intensity by H passivation was confirmed also, and the possible mechanism is discussed.
525 - 528
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