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Bulletin of the Korean Chemical Society (BKCS)

ISSN 0253-2964(Print)
ISSN 1229-5949(Online)
Volume 25, Number 4
BKCSDE 25(4)
April 20, 2004 

Chemical Vapor Deposition of β-LiGaO2 Films on Si(100) Using a Novel Single Precursor
Myung M. Sung*, Chang G. Kim, Yunsoo Kim
Metal organic chemical vapor deposition, LiGaO2, Single precursor, GaN
LiGaO2 films have been grown on Si (100) substrates using a new single precursor [Li(OCH2CH2OCH3)2-Ga(CH3)2]2 under high vacuum conditions (5 × 10-6 Torr). The [Li(OCH2CH2OCH3)2Ga(CH3)2]2 was synthesized and characterized by using spectroscopic methods and single-crystal X-ray diffraction analysis. The chemical composition, crystalline structure, and morphology of the deposited films were investigated by X-ray photoelectron spectroscopy, X-ray diffraction, and scanning electron microscopy. The results show that polycrystalline LiGaO2 films preferentially oriented in the [010] direction can be deposited on Si (100) at 500- 550 ℃ by metal organic chemical vapor deposition (MOCVD). The single precursor [Li(OCH2CH2OCH3)2Ga(CH3)2]2 has been found suitable for chemical vapor deposition of LiGaO2 thin films on Si substrates.
480 - 484
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