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Bulletin of the Korean Chemical Society (BKCS)

ISSN 0253-2964(Print)
ISSN 1229-5949(Online)
Volume 25, Number 4
BKCSDE 25(4)
April 20, 2004 

Atomic Layer Deposition of TiO2 Thin Films from Ti(OiPr)2(dmae)2 and H2O
Jae P. Lee, Mi H. Park, Taek-Mo Chung, Yunsoo Kim, Myung M. Sung*
Atomic layer deposition, TiO2, Precursor
TiO2 thin films were grown on Si (100) substrates by atomic layer deposition using [Ti(OPri)2(dmae)2] and water as precursors. The thickness, chemical composition, crystalline structure, and morphology of the deposited films were investigated by transmission electron microscopy, UV spectrometry, X-ray photoelectron spectroscopy, X-ray diffraction, and atomic force microscopy. The results show that TiO2 ALD using [Ti(OPri)2(dmae)2] as a precursor is self-controlled at temperatures of 100-300 ℃. At the growth temperatures below 300 ℃, the surface morphology of the TiO2 films is smooth and uniform. The TiO2 film was grown with a preferred orientation toward the [101] direction at 400 ℃.
475 - 479
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